To select the correct power device materials, GaN, Si, and SiC, in industrial switching mode power supplies is becoming increasingly complex, with demands for higher efficiency, higher power density, lower cost, and more reliability. To address these challenges, designers need to understand the all-round factors including topologies to match different devices performances that can handle the complexities of industrial SMPS designs. In this webinar, we will explore how these different materials made power devices fit for different industrial SMPS needs. Several design examples using different types of power devices with detail explanation will be given to shorten designers power devices selection studies in their industrial SMPS development.
Motor drives in industrial applications and major home appliances have traditionally used Si MOSFETs and IGBTs and switched at very low frequencies, but the benefits of GaN have recently begun to transition these applications towards >20 kHz with higher system efficiency, smaller size, and lower overall cost. This webinar will explain the motivations to adopt GaN HEMTs in motor drives at voltages from 48 V to 400 V, including some fundamental device benefits as well as system-level improvements, such as enhanced motor performance, reduced cooling burden, and faster control dynamics.
Lead Principal Application Engineer, Infineon Technologies
Martin Cheung is systems architect in Power & Sensor Systems business unit at Infineon Technologies focusing on industrial applications. In this role, he studies system level requirements to determine best fit power devices and sensors products...
Director Segment Analog & Power & TSC Manager, EBV Elektronik
Milan Ivković earned his Dipl.-Ing. degree in 2000 and his M.Sc. in 2007 from the University of Belgrade, School of Electrical Engineering. His master's research focused on power factor correction using current injection in 12-pulse converters. He...
Lead Principal Engineer in GaN Application Development, Infineon
Dr. Edward A. Jones is a Lead Principal Engineer in GaN Application Development for Infineon Technologies. He completed his Ph.D. at The University of Tennessee in 2017, and his B.S.E.E. in 2007 at Virginia Tech. Dr. Jones has co-authored ~40...